Courses:

Physics of Microfabrication: Front End Processing >> Content Detail



Study Materials



Readings

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This section contains readings that were used during the course. The book by Plummer, Deal and Griffin is the only required text but the other reading material is useful for obtaining a better understanding of the course topics. The readings for each session from the required textbook are listed below in the table.

Wherever possible, the book citations below reflect the specific editions used in the course.



Texts


Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.

Wolf, Stanley, and Richard Tauber. Silicon Processing for the VLSI Era . 2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.

Sze, Simon. VLSI Technology. 2nd ed. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.

Campbell, Stephen. The Science and Engineering of Microelectronic Fabrication. 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.

Vossen, John, and Werner Kern, eds. Thin Film Processes. Burlington, MA: Academic Press, 1978. ISBN: 0127282505.

Vossen, John, and Werner Kern. Thin Film Processes. Burlington, MA: Academic Press, 1991. ISBN: 0127282513.

Mayer, James W., and Sylvanus S. Lau. Electronic Materials Science: For Integrated Circuits in Si and GaAs. New York, NY: Macmillan, 1990. ISBN: 0023781408.

Pierret, Robert, and George W. Neudeck. Modular Series on Solid State Devices. Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.

Pierret, Robert. Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.

Taur, Yuan, and Tak H. Ning. Fundamentals of Modern VLSI Devices. Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.



Journals/Conference Proceedings


IEEE Transactions on Electron Devices (published monthly)

Applied Physics Letters

Journal of Applied Physics

IEEE IEDM Conference Proceedings (published each December)



Readings by Session



Lec #TOPICSREADINGS
1Introduction to 6.774

CMOS Process Flow
Chapters 1 and 2
2Crystal Growth, Wafer Fabrication, and Basic Properties of Si WafersChapter 3
3Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

Wafer Cleaning and Gettering
Chapter 3 and start chapter 4
4Wafer Cleaning and Gettering (cont.)Chapter 4
5Wafer Cleaning and Gettering - Contamination Measurement Techniques

Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques
Chapter 4 and start chapter 6
6Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide ModelsChapter 6
7Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point DefectsChapter 6
8Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple AnalyticChapter 7
9Dopant Diffusion - Numerical Techniques in Diffusion, E Field EffectsChapter 7
10Dopant Diffusion - Fermi Level Effects, I and V Assisted DiffusionChapter 7
11Dopant Diffusion - Review Atomic Scale Models, Profile Measurement TechniquesChapter 7
12Ion Implantation and Annealing - Analytic Models and Monte CarloChapter 8
13Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TEDChapter 8
14Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED IntroductionChapter 8
15Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detailChapter 8
16The SUPREM IV Process Simulator
17Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial GrowthChapter 9
18Thin Film Deposition and Epitaxy - CVD Examples and PVDChapter 9
19Thin Film Deposition and Epitaxy - Modeling Topography of DepositionChapter 9
20Etching - IntroductionChapter 10
21Etching - Poly Gate Etching, Stringers, Modeling of EtchingChapter 10
22Silicides, Device Contacts, Novel Gate MaterialsChapter 11
23Growth and Processing of Strained Si/SiGe and Stress Effects on Devices
24-26Report Presentations

 








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